KF3002M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications， and low power dissipation in a very small outline surface mount package.

  FEATURES

20V/3A: Ros(oN) =29mQ@ Vas=4.5V, lp=3A

  Ros(ON) =36mQ@ Vcs=2.5V, lo=2A

High Density Cell Design For Ultra Low On-Resistance

Subminiature surface mount package:SOT23-3L

  Application

Battery management

High speed switch

Low power DC to DC converter

KF3002M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications， and low power dissipation in a very small outline surface mount package.

  FEATURES

20V/3A: Ros(oN) =29mQ@ Vas=4.5V, lp=3A

  Ros(ON) =36mQ@ Vcs=2.5V, lo=2A

High Density Cell Design For Ultra Low On-Resistance

Subminiature surface mount package:SOT23-3L

  Application

Battery management

High speed switch

Low power DC to DC converter

KF3002M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications， and low power dissipation in a very small outline surface mount package.

  FEATURES

20V/3A: Ros(oN) =29mQ@ Vas=4.5V, lp=3A

  Ros(ON) =36mQ@ Vcs=2.5V, lo=2A

High Density Cell Design For Ultra Low On-Resistance

Subminiature surface mount package:SOT23-3L

  Application

Battery management

High speed switch

Low power DC to DC converter

N沟道场效应管IC

N沟道场效应管IC

N沟道场效应管IC N沟道场效应管IC