KF3001 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very small outline surface mount package.

  FEATURES

-20V/-2.8A: Ros(ON) =93mQ@ Vcs=-4.5V,Ib=-2.8A

  Ros(ON) =113mM@ Vcs=-2.5V,Io=-2A

High Density Cell Design For Ultra Low On

-Resistance

Subminiature surface mount package:SOT23-3L

  Typical Application

Power management

Load switch

Battery protection

KF3001 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very small outline surface mount package.

  FEATURES

-20V/-2.8A: Ros(ON) =93mQ@ Vcs=-4.5V,Ib=-2.8A

  Ros(ON) =113mM@ Vcs=-2.5V,Io=-2A

High Density Cell Design For Ultra Low On

-Resistance

Subminiature surface mount package:SOT23-3L

  Typical Application

Power management

Load switch

Battery protection

KF3001 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very small outline surface mount package.

  FEATURES

-20V/-2.8A: Ros(ON) =93mQ@ Vcs=-4.5V,Ib=-2.8A

  Ros(ON) =113mM@ Vcs=-2.5V,Io=-2A

High Density Cell Design For Ultra Low On

-Resistance

Subminiature surface mount package:SOT23-3L

  Typical Application

Power management

Load switch

Battery protection

 P沟道场效应管IC

 P沟道场效应管IC

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