- 深圳市亿创微芯电子有限公司
11年
FEATURES
Super high dense cell trench design for low RDS(on).
Rugged and reliable.
SOT-23-3L package
| USB限流芯片 | ||||||
| 产品型号 | 工作电压 | 限制电流 | 静态电流 | 截止电流 | 内阻 | 封装 |
| KF2015 | 2.4V-5.5V | 1A | 9μA | <1μA | 200mΩ | SOT-23-5 |
| KF2016 | 2.4V-5.5V | 2.1A/1.5A/1A/0.65A | 25μA | <1μA | 80mΩ | SOT-23-5 |
| KF2018 | 2.7V-5.5V | 1.5A/2.1A/2.5A | 30μA | <1μA | 52mΩ | SOT-23-5 |
| SOP-8 | ||||||
| 触摸芯片 | ||||||
| 产品型号 | 输入电压 | 输出电压 | 输出电流 | 静态功耗 | 封装 | |
| KF602 | 2.3～5.5V | - | - | - | SOP-8 | |
| SSOP-16 | ||||||
| KF1015C/D | 2.3～5.5V | - | - | - | SOT-23-6 | |
| KF1016 | 2.4～5.5V | - | - | - | SSOP-16 | |
| SOT-23-6 | ||||||
| KF1017 | 2.4～5.5V | - | - | 10μA | SOP-8 | |
| DIP-8 | ||||||
| SOT-23-6 | ||||||
| KF6001 | 3～6V | 4～6V | 43～100mA | 250μA | SOP-8 |
| 场效应管-P沟道 | ||||||
| 产品型号 | 特点 | VDS | VGS | ID(max) | 导通电阻 | 封装 |
| KF301 | P-MOS管 | -20V | ±8V | -2.8A | 80mΩ | SOT-23-3 |
| KF3001 | P-MOS管 | -20V | ±8V | -2.8A | 80mΩ | SOT-23-3 |
| KF3003 | P-MOS管 | -30V | ±12V | -4.2A | 56mΩ | SOT-23-3 |
| KF3007 | P-MOS管 | -30V | ±12V | -4.1A | 88mΩ | SOT-23-3 |
| KF3015 | P-MOS管 | -20V | ±12V | -4.2A | 60mΩ | SOT-23-3 |
| KF3021 | P-MOS管 | -30V | ±12V | -4.2A | 53mΩ | SOT-23-3 |
| KF3401 | P-MOS管 | -30V | ±12V | -4.2A | 75mΩ | SOT-23-3 |
| KF3407 | P-MOS管 | -30V | ±20V | -4.2A | 55mΩ | SOT-23-3 |
P沟道场效应管IC
P沟道场效应管IC
P沟道场效应管IC
询价
