MEM 2318Series Dual N-channel enhancement mode field-effect transistor ,produced
with high cell density DMOS trench technology, which is especially used to minimize on- state resistance.
This device particularly suits low voltage applications, and low power dissipation.
Features
20V/6A
Rps(oN)=16m9@ Vas =4V,Ip=5A
RDs(ON) =19mQ@ Vas= =3V,Ip=4.6A
RDs(ON) =21mQ@ Vas=2.5V,]p=4.3A
High Density Cell Design For UItra
Low On-Resistance
Surface mount package: SOT23-6
ESD Protected: 3000 V
Typical Application
Battery management
power management
Portable equipment
L ow power DC to DC converter.
L oad switch
LCD adapter
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