场效应管IC
场效应管IC
场效应管IC
MEM2301XG Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation, and low power dissipation in a very small outline surface mount package.
Features
20V-/-2.8A
Ros(oN) =93mQ@ Vas=4.5V,Io= 2.8A
Ros(oN) =113mQ@ Vcs= 2.5V,lp=-2A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23
Typical Application
Power management
Load switch
Battery protection
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