深圳市亿创微芯电子有限公司
11年

深圳市亿创微芯电子有限公司

收藏本公司 人气:1352818

11年

企业档案

  • 相关证件:营业执照已审核 
  • 会员类型:
  • 会员年限:11年
  • 李娜娜 QQ:2232785377QQ:2935710643
  • 电话:0755-83538626
  • 手机:15815503065
  • 阿库IM:
  • 地址:中国 广东 深圳市民治东边大厦701-702
  • 传真:0755-83538626
  • E-mail:elemchip@126.com
MEM2301 半导体场效应晶体管IC
MEM2301 半导体场效应晶体管IC
<>

MEM2301 半导体场效应晶体管IC

型号/规格:

MEM2301

品牌/商标:

ME

封装:

SOT/SOP

批号:

全新原装

价格:

0.5/个

产品信息

MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.

Typical ApplicationAbsolute Maximum RatingsParameter Symbol Ratings UnitDrain-Source Voltage VDSS -20 VGate-Source Voltage VGSS ±8 VContinuous Drain CurrentTA=25℃ID-2.8ATA=70℃ -1.8Pulsed Drain Current1,2 IDM -10 ATotal Power DissipationTA=25℃PD0.7WTA=70℃ 0.45Operating Temperature Range TOpr 150 ℃Storage Temperature Range Tstg -65/150 ℃MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.? -20V/-2.8ARDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8ARDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A? High Density Cell Design For Ultra Low On-Resistance? Subminiature surface mount package:SOT23? Power management? Load switch? Battery protection 
Typical ApplicationAbsolute Maximum RatingsParameter Symbol Ratings UnitDrain-Source Voltage VDSS -20 VGate-Source Voltage VGSS ±8 VContinuous Drain CurrentTA=25℃ID-2.8ATA=70℃ -1.8Pulsed Drain Current1,2 IDM -10 ATotal Power DissipationTA=25℃PD0.7WTA=70℃ 0.45Operating Temperature Range TOpr 150 ℃Storage Temperature Range Tstg -65/150 ℃MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used tominimize on-state resistance. This device particularlysuits low voltage applications, and low powerdissipation, and low power dissipation in a very smalloutline surface mount package.? -20V/-2.8ARDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8ARDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A? High Density Cell Design For Ultra Low On-Resistance? Subminiature surface mount package:SOT23? Power management? Load switch? Battery protection 半导体场效应晶体管IC 半导体场效应晶体管IC 半导体场效应晶体管IC 半导体场效应晶体管IC

联系我们
深圳市亿创微芯电子有限公司
地址:中国 广东 深圳市民治东边大厦701-702
联系人:李娜娜
电话:0755-83538626
传真:0755-83538626
手机:15815503065